27,165 research outputs found

    Tackling Challenges in Seebeck Coefficient Measurement of Ultra-High Resistance Samples with an AC Technique

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    Seebeck coefficient is a widely studied semiconductor property. Conventional Seebeck coefficient measurements are based on DC voltage measurement. Normally this is performed on samples with moderate resistances (e.g., below a few MΩ level). Certain semiconductors are intrinsic and highly resistive. Many examples can be found in optical and photovoltaic materials. The hybrid halide perovskites that have gained extensive attention recently are a good example. Despite great attention from the materials and physics communities, few successful studies exist of the Seebeck coefficient of these compounds, for example CH3NH3PbI3. An AC-technique-based Seebeck coefficient measurement is reported, which makes high-quality Seebeck voltage measurements on samples with resistances up to the 100 GΩ level. This is achieved through a specifically designed setup to enhance sample isolation and increase capacitive impedance. As a demonstration, Seebeck coefficient measurement of a CH3NH3PbI3 thin film is performed at dark, with sample resistance 150 GΩ, and found S = +550 µV K−1. The strategy reported could be applied to the studies of fundamental transport parameters of all intrinsic semiconductors that have not been feasible

    Robust H∞ feedback control for uncertain stochastic delayed genetic regulatory networks with additive and multiplicative noise

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    The official published version can found at the link below.Noises are ubiquitous in genetic regulatory networks (GRNs). Gene regulation is inherently a stochastic process because of intrinsic and extrinsic noises that cause kinetic parameter variations and basal rate disturbance. Time delays are usually inevitable due to different biochemical reactions in such GRNs. In this paper, a delayed stochastic model with additive and multiplicative noises is utilized to describe stochastic GRNs. A feedback gene controller design scheme is proposed to guarantee that the GRN is mean-square asymptotically stable with noise attenuation, where the structure of the controllers can be specified according to engineering requirements. By applying control theory and mathematical tools, the analytical solution to the control design problem is given, which helps to provide some insight into synthetic biology and systems biology. The control scheme is employed in a three-gene network to illustrate the applicability and usefulness of the design.This work was funded by Royal Society of the U.K.; Foundation for the Author of National Excellent Doctoral Dissertation of China. Grant Number: 2007E4; Heilongjiang Outstanding Youth Science Fund of China. Grant Number: JC200809; Fok Ying Tung Education Foundation. Grant Number: 111064; International Science and Technology Cooperation Project of China. Grant Number: 2009DFA32050; University of Science and Technology of China Graduate Innovative Foundation

    Photoemission Spectroscopy of Magnetic and Non-magnetic Impurities on the Surface of the Bi2_2Se3_3 Topological Insulator

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    Dirac-like surface states on surfaces of topological insulators have a chiral spin structure that suppresses back-scattering and protects the coherence of these states in the presence of non-magnetic scatterers. In contrast, magnetic scatterers should open the back- scattering channel via the spin-flip processes and degrade the state's coherence. We present angle-resolved photoemission spectroscopy studies of the electronic structure and the scattering rates upon adsorption of various magnetic and non-magnetic impurities on the surface of Bi2_2Se3_3, a model topological insulator. We reveal a remarkable insensitivity of the topological surface state to both non-magnetic and magnetic impurities in the low impurity concentration regime. Scattering channels open up with the emergence of hexagonal warping in the high-doping regime, irrespective of the impurity's magnetic moment.Comment: 5 pages, 4 figure

    Work Function of Single-wall Silicon Carbide Nanotube

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    Using first-principles calculations, we study the work function of single wall silicon carbide nanotube (SiCNT). The work function is found to be highly dependent on the tube chirality and diameter. It increases with decreasing the tube diameter. The work function of zigzag SiCNT is always larger than that of armchair SiCNT. We reveal that the difference between the work function of zigzag and armchair SiCNT comes from their different intrinsic electronic structures, for which the singly degenerate energy band above the Fermi level of zigzag SiCNT is specifically responsible. Our finding offers potential usages of SiCNT in field-emission devices.Comment: 3 pages, 3 figure

    Microscopic origin of local moments in a zinc-doped high-TcT_{c} superconductor

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    The formation of a local moment around a zinc impurity in the high-TcT_{c} cuprate superconductors is studied within the framework of the bosonic resonating-valence-bond (RVB) description of the tJt-J model. A topological origin of the local moment has been shown based on the phase string effect in the bosonic RVB theory. It is found that such an S=1/2S=1/2 moment distributes near the zinc in a form of staggered magnetic moments at the copper sites. The corresponding magnetic properties, including NMR spin relaxation rate, uniform spin susceptibility, and dynamic spin susceptibility, etc., calculated based on the theory, are consistent with the experimental measurements. Our work suggests that the zinc substitution in the cuprates provide an important experimental evidence for the RVB nature of local physics in the original (zinc free) state.Comment: The topological reason of local moment formation is given. One figure is adde
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